Noncollinear Antiferromagnets Research Articles

Prospects for Antiferromagnetic Spintronic Devices

This article examines recent advances in the field of antiferromagnetic spintronics from the perspective of potential device realization and applications. We discuss advances in the electrical control of antiferromagnetic order by current-induced spin–orbit torques, particularly in antiferromagnetic thin films interfaced with heavy metals. We also review possible scenarios for using voltage-controlled magnetic anisotropy as a more efficient mechanism to control antiferromagnetic order in thin films with perpendicular magnetic anisotropy. Next, we discuss the problem of electrical detection (i.e., readout) of antiferromagnetic order and highlight recent experimental advances in realizing anomalous Hall and tunneling magnetoresistance effects in thin films and tunnel junctions, respectively, which are based on noncollinear antiferromagnets. Understanding the domain structure and dynamics of antiferromagnetic materials is essential for engineering their properties for applications. For this reason, we then provide an overview of imaging techniques as well as micromagnetic simulation approaches for antiferromagnets. Finally, we present a perspective on potential applications of antiferromagnets for magnetic memory devices, terahertz sources, and detectors.

The Impact of Local Strain Fields in Noncollinear Antiferromagnetic Films.

Antiferromagnets hosting structural or magnetic order that breaks time reversal symmetry are of increasing interest for "beyond von Neumann" computing applications because the topology of their band structure allows for intrinsic physical properties, exploitable in integrated memory and logic function. One such group are the noncollinear antiferromagnets. Essential for domain manipulation is the existence of small net moments found routinely when the material is synthesized in thin film form and attributed to symmetry breaking caused by spin canting, either from the Dzyaloshinskii-Moriya interaction or from strain. Although the spin arrangement of these materials makes them highly sensitive to strain, there is little understanding about the influence of local strain fields caused by lattice defects on global properties, such as magnetization and anomalous Hall effect. This premise is investigated by examining noncollinear antiferromagnetic films that are either highly lattice mismatched or closely matched to their substrate. In either case, edge dislocation networks are generated and for the former case, these extend throughout the entire film thickness, creating large local strain fields. These strain fields allow for finite intrinsic magnetization in seemingly structurally relaxed films and influence the antiferromagnetic domain state and the intrinsic anomalous Hall effect.

Field‐Free Switching of Perpendicular Magnetization by Anisotropic Spin Hall Effect in Mn3Ir

AbstractManipulation of the magnetization by spin‐orbit torque (SOT) stands as a crucial advancement in spintronics due to its merits in energy‐efficient and high‐speed operation. However, the conventional SOT devices involving a heavy metal/ferromagnet cannot deterministically switch the perpendicularly magnetized ferromagnet without an external magnetic field, which hinders its practical implementation. Here, room temperature field‐free switching for perpendicularly magnetized ferromagnets is demonstrated using spin currents with the out‐of‐plane spin polarization induced by noncollinear antiferromagnets L12‐Mn3Ir. Both in‐plane and out‐of‐plane spin polarizations are observed, and the tilting angle of the spin polarization is estimated to be ≈10°. The spin Hall conductivity of out‐of‐plane spin is 1.43 × 104 ћ/2e·Ω−1m−1, which is the largest among several 2D and antiferromagnetic materials, including WTe2, RuO2, and Mn3GaN. Furthermore, field‐free SOT switching is demonstrated with an ns‐current pulse, and the current density is comparable with the reported values of the field‐assisted pulse switching. This work paves the way for employing noncollinear antiferromagnets for wafer‐scale spintronic device applications.

Magnetic Switching Dynamics and Tunnel Magnetoresistance Effect Based on Spin-Splitting Noncollinear Antiferromagnet Mn3Pt

In comparison to ferromagnets, antiferromagnets are believed to have superior advantages for applications in next-generation magnetic storage devices, including fast spin dynamics, vanishing stray fields and robust against external magnetic field, etc. However, unlike ferromagnetic orders, which could be detected through tunneling magnetoresistance effect in magnetic tunnel junctions, the antiferromagnetic order (i.e., Néel vector) cannot be effectively detected by the similar mechanism due to the spin degeneracy of conventional antiferromagnets. Recently discovered spin-splitting noncollinear antiferromagnets, such as Mn3Pt with momentum-dependent spin polarization due to their special magnetic space group, make it possible to achieve remarkable tunneling magnetoresistance effects in noncollinear antiferromagnetic tunnel junctions. Through first-principles calculations, we demonstrate that the tunneling magnetoresistance ratio can reach more than 800% in Mn3Pt/perovskite oxides/Mn3Pt antiferromagnetic tunnel junctions. We also reveal the switching dynamics of Mn3Pt thin film under magnetic fields using atomistic spin dynamic simulation. Our study provides a reliable method for detecting Néel vector of noncollinear antiferromagnets through the tunnel magnetoresistance effect and may pave its way for potential applications in antiferromagnetic memory devices.

Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance.

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here it is shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3 , sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

Magnetic dynamics of strained non-collinear antiferromagnet

In this work, we theoretically study the switching and oscillation dynamics in strained non-collinear antiferromagnet (AFM) Mn3X (X = Sn, Ge, etc.). Using the perturbation theory, we identify three separable dynamic modes—one uniform and two optical modes, for which we analytically derive the oscillation frequencies and effective damping. We also establish a compact, vector equation for describing the dynamics of the uniform mode, which is in analogy to the conventional Landau–Lifshitz–Gilbert (LLG) equation for ferromagnet but captures the unique features of the cluster octuple moment. Extending our model to include spatial inhomogeneity, we are able to describe the excitations of dissipative spin wave and spin superfluidity state in the non-collinear AFM. Furthermore, we carry out numerical simulations based on coupled LLG equations to verify the analytical results, where good agreements are reached. Our treatment with the perturbative approach provides a systematic tool for studying the dynamics of non-collinear AFM and is generalizable to other magnetic systems in which the Hamiltonian can be expressed in a hierarchy of energy scales.

Temperature- and magnetic field-induced magnetic structural changes in the Fe3Si/FeSi2 superlattice

Artificial lattices with semiconductor spacers are expected to exhibit changes in their magnetic structure owing to the control of their electronic states. The temperature (T) and magnetic-field (H ext) dependence of the in-plane magnetic structure of an [Fe3Si/FeSi2]20 superlattice with a nonmagnetic and semiconducting FeSi2 spacer layer is investigated using magnetization and polarized neutron reflectivity measurements. When H ext = 5 mT, nearly collinear antiferromagnetic (AF) structures are observed from 4 to 298 K. When H ext = 1 T, field-induced fan-like, noncollinear AF structures showing ferromagnetic components along H ext and transverse AF components are observed at low T.

Phase transitions associated with magnetic-field induced topological orbital momenta in a non-collinear antiferromagnet

Resistivity measurements are widely exploited to uncover electronic excitations and phase transitions in metallic solids. While single crystals are preferably studied to explore crystalline anisotropies, these usually cancel out in polycrystalline materials. Here we show that in polycrystalline Mn3Zn0.5Ge0.5N with non-collinear antiferromagnetic order, changes in the diagonal and, rather unexpected, off-diagonal components of the resistivity tensor occur at low temperatures indicating subtle transitions between magnetic phases of different symmetry. This is supported by neutron scattering and explained within a phenomenological model which suggests that the phase transitions in magnetic field are associated with field induced topological orbital momenta. The fact that we observe transitions between spin phases in a polycrystal, where effects of crystalline anisotropy are cancelled suggests that they are only controlled by exchange interactions. The observation of an off-diagonal resistivity extends the possibilities for realising antiferromagnetic spintronics with polycrystalline materials.

Review on spin-split antiferromagnetic spintronics

Spin splitting plays a pivotal role in most modern spintronic effects. Conventionally, spin splitting accompanied by macroscopic magnetic moments has been typically discussed in the context of ferromagnets. Nevertheless, the amalgamation of spin splitting and antiferromagnets has led to a range of intriguing magnetoelectronic effects in the field of antiferromagnetic spintronics. Considering this perspective, this Letter focuses on exploring the emerging area of spin-split antiferromagnetic spintronics. It begins with a brief overview of the historical development of the anomalous Hall effect. Subsequently, recent studies on the spin-splitting-related anomalous Hall effects in antiferromagnets are elaborated upon. Finally, a summary is provided outlining the occurrence of spin splitting in different types of antiferromagnets, including noncollinear antiferromagnets and collinear altermagnets. Additionally, the associated magnetoelectronic effects are discussed.

Field‐Free Spin‐Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source

AbstractThe utilization of novel noncollinear antiferromagnetic materials holds great promise for the development of energy‐efficient spintronic devices. However, only a few studies have reported on the all‐electrical control of perpendicular magnetization switching using noncollinear antiferromagnets as the spin source, and the underlying mechanism behind the unconventional spin‐orbit torque (SOT) is still a topic of debate. In this work, deterministic perpendicular magnetization switching in Mn3Sn/CoTb bilayers is successfully achieved. Compared to the control samples with heavy metal as the spin source, the critical switching current density is over one order of magnitude reduced, indicating an enhanced efficiency of the out‐of‐plane charge‐to‐spin conversion in the textured Mn3Sn films. The influence of film thickness and growth temperature on the efficiency of different spin polarizations suggests potential roles of crystal quality and spin texture in spin diffusion with different spin polarization directions. These findings provide valuable insights into the crystal structure, spin‐orbit torque effects, and charge‐to‐spin conversion in Mn3Sn films, highlighting the importance of understanding interface and bulk contributions in antiferromagnetic spin transport phenomena.

Infrared imaging of magnetic octupole domains in non-collinear antiferromagnets

ABSTRACT Magnetic structure plays a pivotal role in the functionality of antiferromagnets (AFMs), which not only can be employed to encode digital data but also yields novel phenomena. Despite its growing significance, visualizing the antiferromagnetic domain structure remains a challenge, particularly for non-collinear AFMs. Currently, the observation of magnetic domains in non-collinear antiferromagnetic materials is feasible only in Mn3Sn, underscoring the limitations of existing techniques that necessitate distinct methods for in-plane and out-of-plane magnetic domain imaging. In this study, we present a versatile method for imaging the antiferromagnetic domain structure in a series of non-collinear antiferromagnetic materials by utilizing the anomalous Ettingshausen effect (AEE), which resolves both the magnetic octupole moments parallel and perpendicular to the sample surface. Temperature modulation due to AEE originating from different magnetic domains is measured by lock-in thermography, revealing distinct behaviors of octupole domains in different antiferromagnets. This work delivers an efficient technique for the visualization of magnetic domains in non-collinear AFMs, which enables comprehensive study of the magnetization process at the microscopic level and paves the way for potential advancements in applications.

Terahertz magnetic excitations in non-collinear antiferromagnetic Mn3Pt: Atomistic-scale dynamical simulations

Current-induced spin–orbit torque (SOT) enables highly efficient manipulation of magnetic orders. Non-collinear antiferromagnets exhibit ultrafast spin dynamics by SOT with much higher oscillation frequency than ferromagnets, offering potential applications in terahertz spintronic devices. In this study, we used atomistic scale Landau-Lifshitz-Gilbert simulation approach to demonstrate different magnetic excitation modes in W/Mn3Pt heterostructures with varying crystalline direction. When the spin polarization is perpendicular to the Kagome plane of Mn3Pt, all the magnetic Mn atoms oscillate periodically within the Kagome plane around the normal direction. In contrast, when the spin polarization is parallel to the Kagome plane, only two neighboring Mn atoms rotate while another neighboring Mn atom remains immobile. Interestingly, both of these magnetic excitation modes have the same frequencies and occur in the terahertz range. Additionally, the frequency is proportional to current density and inversely proportional to the antiferromagnetic layer thickness. These findings provide a deeper understanding of magnetic excitation properties in non-collinear antiferromagnets, which can inform the design of terahertz spintronic devices.

Voltage-Controlled High-Bandwidth Terahertz Oscillators Based on Antiferromagnets.

Producing compact voltage-controlled frequency generators and sensors operating in the terahertz (THz) regime represents a major technological challenge. Here, we show that noncollinear antiferromagnets (NCAFMs) with kagome structure host gapless self-oscillations whose frequencies are tunable from 0Hz to the THz regime via electrically induced spin-orbit torques (SOTs). The auto-oscillations' initiation, bandwidth, and amplitude are investigated by deriving an effective theory, which captures the reactive and dissipative SOTs. We find that the dynamics strongly depends on the ground state's chirality, with one chirality having gapped excitations, whereas the opposite chirality provides gapless self-oscillations. Our results reveal that NCAFMs offer unique THz functional components, which could play a significant role in filling the THz technology gap.

Large anomalous Hall effect and unusual domain switching in an orthorhombic antiferromagnetic material NbMnP

Specific antiferromagnetic (AF) spin configurations generate large anomalous Hall effects (AHEs) even at zero magnetic field through nonvanishing Berry curvature in momentum space. In addition to restrictions on AF structures, suitable control of AF domains is essential to observe this effect without cancellations among its domains; therefore, compatible materials remain limited. Here we show that an orthorhombic noncollinear AF material, NbMnP, acquired AF structure-based AHE and controllability of the AF domains. Theoretical calculations indicated that a large Hall conductivity of ~230 Ω−1cm−1 originated from the AF structure of NbMnP. Symmetry considerations explained the production of a small net magnetization, whose anisotropy enabled the generation and cancellation of the Hall responses using magnetic fields in different directions. Finally, asymmetric hysteresis in NbMnP shows potential for the development of controllability of responses in AF materials.

Vector-chirality driven topological phase transitions in noncollinear antiferromagnets and its impact on anomalous Hall effect

Magnetic materials showing topologically nontrivial quantum states with high tunability is an undoubtedly important topic in condensed matter physics and material science. Based on the first-principles electronic structure calculations and subsequent symmetry adapted effective low-energy k.p theory, we show in a noncollinear antiferromagnet (AFM), Mn3Sn, that the switching of the vector-chirality, κ, is an unconventional route to topological phase transition from a nodal-ring to a Weyl point semimetal. Specifically, we find that the switching of κ via staggered rotation leads to gapping out an elliptic nodal-ring everywhere at the Fermi-level except for a pair of points on the ring. As a consequence, the topological phase transition switches the anomalous Hall conductivity (AHC) from zero to a giant value. Furthermore, we theoretically demonstrate how the controlled manipulation of the chiral AFM order keeping κ unaltered favors unusual rotation of Weyl-points on the ring. In fact, without staggered rotation, this enables us to tune and switch the sign of in-plane components of the AHC by a collective uniform rotations of spins in the AFM unit cell.

Vector spin Seebeck effect and spin swapping effect in antiferromagnetic insulators with non-collinear spin structure

Antiferromagnets (AFs) are prospective for next-generation high-density and high-speed spintronic applications due to their negligible stray field and ultrafast spin dynamics, notwithstanding the challenges in detecting and manipulating AF order with no magnetization (M = 0). Among the AFs, non-collinear AFs are of particular interest because of their unique properties arising from the non-collinear spin structure and the small magnetization M. In this work, we describe the recently observed vector spin Seebeck effect in non-collinear LuFeO3, where the magneto-thermovoltage under an in-plane temperature gradient, not previously observed, is consistent with the predicted spin swapping effect. Our results shed light on the importance of the non-collinear spin structure in the emerging spin phenomena in non-collinear AFs and offer a new class of materials for AF spintronics and spin caloritronics.

Variable spin texture in Mn3Sn/Pt heterostructures revealed by magnetic circular dichroism

Non-collinear antiferromagnets with a D019 hexagonal structure have attracted tremendous attention for their potential applications in topological spintronics. Exploring the relationship between spin texture and electronic band structure is crucial for understanding the physical nature of these chiral antiferromagnets. Here, we systematically investigated the variation of topological spin texture of the non-collinear antiferromagnet Mn3Sn film using magnetic circular dichroism (MCD) spectroscopy. The evolution of Mn spin texture from coplanar inverted triangular structure to swirling spin texture was achieved in Mn3Sn/Pt heterostructures through introducing an interfacial Dzyaloshinskii–Moriya interaction (DMI) at room temperature. Correspondingly, unconventional zero-crossing points in energy-resolved MCD spectra as well as a gradual shift of a zero-crossing point to longer wavelength were observed. Our work provides a spin texture modulation approach via interfacial DMI and an effective non-contact magneto-optical detection method to reveal the spin texture in the non-collinear antiferromagnet/heavy metal system.

Manipulating non-collinear antiferromagnetic order and thermal expansion behaviors in triangular lattice Mn3Ag1−xSn(Ge)xN

Magnetic materials with non-collinear spin orderings provide an outstanding platform to probe spintronic phenomena owing to their strong spin-orbit coupling (SOC) and unique Berry phase. It is thus important to obtain a non-collinear antiferromagnetic (AFM) phase at room temperature (RT). Significantly, the discovery of novel materials with nearly zero thermal expansion (ZTE) property near RT is required and pursued for avoiding thermal stress and fracture in spintronic devices. Herein, the doping of Sn (Ge) at the Ag site in the triangular lattice Mn3Ag1−xSn(Ge)xN compounds increases effectively the Néel point and makes the interesting non-collinear Γ5g AFM phase exist above RT. The magnetic phase diagrams with Γ5g phase up to 498 K were built by the combined analysis of neutron powder diffraction (NPD), magnetic measurements, electronic transport, and differential scanning calorimetry (DSC). The thermal expansion behaviors of Mn3Ag1−xSn(Ge)xN were modulated, and the nearly ZTE above RT was achieved in Mn3Ag0.5Ge0.5N within Γ5g AFM ordering. Our findings offer an effective way to tailor the non-collinear AFM ordering and correlated thermal expansion behavior for potential use in the emerging field of thermal stress-free magnetic chip materials.

Handedness anomaly in a non-collinear antiferromagnet under spin-orbit torque.

Non-collinear antiferromagnets are an emerging family of spintronic materials because they not only possess the general advantages of antiferromagnets but also enable more advanced functionalities. Recently, in an intriguing non-collinear antiferromagnet Mn3Sn, where the octupole moment is defined as the collective magnetic order parameter, spin-orbit torque (SOT) switching has been achieved in seemingly the same protocol as in ferromagnets. Nevertheless, it is fundamentally important to explore the unknown octupole moment dynamics and contrast it with the magnetization vector of ferromagnets. Here we report a handedness anomaly in the SOT-driven dynamics of Mn3Sn: when spin current is injected, the octupole moment rotates in the opposite direction to the individual moments, leading to a SOT switching polarity distinct from ferromagnets. By using second-harmonic and d.c. magnetometry, we track the SOT effect onto the octupole moment during its rotation and reveal that the handedness anomaly stems from the interactions between the injected spin and the unique chiral-spin structure of Mn3Sn. We further establish the torque balancing equation of the magnetic octupole moment and quantify the SOT efficiency. Our finding provides a guideline for understanding and implementing the electrical manipulation of non-collinear antiferromagnets, which in nature differs from the well-established collinear magnets.

Magnetic octupole domain evolution and domain-wall structure in the noncollinear Weyl antiferromagnet Mn3Ge

Antiferromagnets with the intrinsic advantages of terahertz spin dynamics and negligible stray fields have been extensively studied for spintronic applications. In particular, spintronic research on antiferromagnets has expanded its focus from collinear to noncollinear Weyl antiferromagnets and discovered that Mn3X (X = Sn, Ge) produces substantial magneto-electric responses. Therefore, noncollinear antiferromagnets could be an ideal spintronic platform. Exploring the domain-wall features in Mn3X is, on the other hand, essential for spintronic device engineering. Here, we report an in-depth study on magnetic octupole domain evolution and domain-wall structure with a choice of Mn3Ge single crystal. Our magneto-optical imaging and the anomalous Hall measurements elucidate the nontrivial magnetic octupole domain nucleation, domain-wall propagation, and pinning behaviors. Moreover, combining the micromagnetic simulation, we reveal that Bloch- and Néel-like walls coexist in bulk with comparable sizes and energy densities. Our findings promote understanding the magnetic octupole domain-wall physics and designing domain-wall-based spintronic devices.